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features ? no external components except pin diode ? supply-voltage range: 2.7v to 5.5v ? highest sensitivity due to automatic sensit ivity adaption (agc) and automatic strong signal adaption (atc) ? automatic supply voltage adaptation ? highest immunity against disturbances from daylight and lamps ? available for carrier frequencies between 30 khz to 56 khz; adjusted by zener-diode fusing 2.5% ? ttl and cmos compatible applications ? home entertainment applications (audio/video) ? home appliances ? remote control equipment 1. description the ic t2526 is a complete ir receiver for data communication developed and opti- mized for use in carrier-frequency-modulated transmission applications. the ic offers highest sensitivity as well as highest suppression of noise from daylight and lamps. the t2526 is available with broadest range of frequencies (30, 33, 36, 37, 38, 40, 44, 56 khz) and 3 different noise suppression regulation types (standard, lamp, short burst) covering requirements of high-end remote control solutions (please refer to selection guide available for t2525/t2526). the t2526 operates in a supply voltage range of 2.7v to 5.5v. the function of the t2526 can be described using the block diagram of figure 1-1 on page 2 . the input stage meets two main functions. first it provides a suitable bias voltage for the pin diode. secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. after amplification by a controlled gain amplif ier (cga) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f 0 which is equivalent to the chosen carrier frequency of the input signal the demodulator is used first to convert the input burst signal to a digital envel ope output pulse and to evaluate the signal information quality, i.e., unwa nted pulses will be suppressed at the output pin. all this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). other special features are used to adapt to the current application to secure best transmission quality. low-voltage ir receiver assp t2526 4597i?auto?05/10
2 4597i?auto?05/10 t2526 figure 1-1. block diagram demodulator input gnd t2526 carrier frequency f 0 modulated ir signal min 6 or 10 pulses out vs oscillator agc/atc and digital control cga and filter micro- controller in
3 4597i?auto?05/10 t2526 2. pin description table 2-1. pin description symbol function vs supply voltage out data output in input pin-diode gnd ground 3. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond t hose indicated in the operational sections of this specification is not implied. exposure to absolute maximum rati ng conditions for extended periods may affect device reliability . parameter symbol value unit supply voltage v s ?0.3 to +6 v supply current i s 3ma input voltage v in ?0.3 to v s v input dc current at v s = 5v i in 0.75 ma output voltage v o ?0.3 to v s v output current i o 10 ma operating temperature t amb ?25 to +85 c storage temperature t stg ?40 to +125 c power dissipation at t amb = 25c p tot 30 mw
4 4597i?auto?05/10 t2526 4. electrical characteristics, 3-v operation t amb = 25c, v s = 3v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* 1 supply 1.1 supply-voltage range v s 2.7 3.0 3.3 v c 1 . 2 supply current i in =0 i s 0.7 0.9 1.3 ma b 2output 2.1 internal pull-up resistor (1) t amb = 25c see figure 6-10 on page 10 r pu 30/40 k a 2.2 output voltage low r 2 = 2.4 k see figure 6-10 on page 10 v ol 250 mv b 2.3 output voltage high v oh v s ? 0.25 vs v b 2.4 output current clamping r 2 = 0 see figure 6-10 on page 10 i ocl 8mab 3 input 3.1 input dc current v in = 0 see figure 6-10 on page 10 i in_dcmax ?150 a c 3.2 input dc current see figure 6-3 on page 7 v in = 0; vs = 3v t amb = 25c i in_dcmax ?350 a b 3.3 minimum detection threshold current see figure 6-1 on page 7 test signal: see figure 6-9 on page 10 v s = 3v t amb = 25c, i in_dc =1 a square pp burst n = 16 f = f 0 ; t per = 10 ms figure 6-8 on page 9 ber = 50 (2) i eemin ?700 pa b 3.4 minimum detection threshold current with ac current disturbance iin_ac100 = 3 a at 100 hz i eemin ?1300 pa c 3.5 maximum detection threshold current with v in > 0v test signal: see figure 6-9 on page 10 v s = 3v, t amb = 25c i in_dc = 1 a square pp burst n = 16 f = f 0 ; t per = 10 ms figure 6-8 on page 9 ber = 5% (2) i eemax ?200 a d *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. depending on version, see ?ordering information? 2. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 puls es can appear at the pin out 3. after transformation of input current into voltage
5 4597i?auto?05/10 t2526 4 controlled amplifier and filter 4.1 maximum value of variable gain (cga) g varmax 51 db d 4.2 minimum value of variable gain (cga) g varmin -5 db d 4.3 total internal amplification (3) g max 71 db d 4.4 center frequency fusing accuracy of bandpass v s = 3v, t amb = 25c f 03v_fuse ?2.5 f 0 +2.5 % a 4.5 overall accuracy center frequency of bandpass f 03v ?5.5 f 0 +3.5 % c 4.6 overall accuracy center frequency of bandpass t amb = 0 to 70c f 03v ?4.5 f 0 +3.0 % c 4.7 bpf bandwidth ?3 db; f 0 = 38 khz; see figure 6-7 on page 9 b 3.8 khz c 4. electrical characteristics, 3-v operation (continued) t amb = 25c, v s = 3v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. depending on version, see ?ordering information? 2. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 puls es can appear at the pin out 3. after transformation of input current into voltage 5. electrical characteristics, 5-v operation t amb = 25c, v s = 5v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* 5 supply 5.1 supply-voltage range v s 4.5 5.0 5.5 v c 5 . 2 supply current i in =0 i s 0.9 1.2 1.6 ma b 6output 6.1 internal pull-up resistor (1) t amb = 25c see figure 6-10 on page 10 r pu 30/40 k a 6.2 output voltage low r 2 = 2.4 k see figure 6-10 on page 10 v ol 250 mv b 6.3 output voltage high v oh v s ? 0.25 vs v b 6.4 output current clamping r 2 = 0 see figure 6-10 on page 10 i ocl 8mab *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. depending on version, see ?ordering information? 2. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 puls es can appear at the pin out 3. after transformation of input current into voltage
6 4597i?auto?05/10 t2526 5.1 esd all pins ? 2000v hbm; 200v mm, mil-std-883c, method 3015.7 5.2 reliability electrical qualification (1000h ) in molded plastic package 7 input 7.1 input dc current v in = 0 see figure 6-10 on page 10 i in_dcmax ?400 a c 7.2 input dc-current see figure 6-4 on page 8 v in = 0; vs = 5v t amb = 25c i in_dcmax ?700 a b 7.3 min. detection threshold current see figure 6-2 on page 7 test signal: see figure 6-9 on page 10 v s = 5v t amb = 25c i in_dc = 1 a square pp burst n = 16 f = f 0 ; t per = 10 ms figure 6-8 on page 9 ber = 50 (2) i eemin ?850 pa b 7.4 min. detection threshold current with ac current disturbance iin_ac100 = 3 a at 100 hz i eemin ?2000 pa c 7.5 max. detection threshold current with v in > 0v test signal: see figure 6-9 on page 10 v s = 5v, t amb = 25 c i in_dc = 1a square pp burst n = 16 f = f 0 ; t per = 10 ms figure 6-8 on page 9 ber = 5% (2) i eemax ?500 a d 8 controlled amplifier and filter 8.1 maximum value of variable gain (cga) g varmax 51 db d 8.2 minimum value of variable gain (cga) g varmin ?5 db d 8.3 total internal amplification (3) g max 71 db d 8.4 resulting center frequency fusing accuracy f 0 fused at v s = 3v v s = 5v, t amb = 25c f 05v f 03v-fuse + 0.5 %a 5. electrical characteristics, 5-v operation (continued) t amb = 25c, v s = 5v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. depending on version, see ?ordering information? 2. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 puls es can appear at the pin out 3. after transformation of input current into voltage
7 4597i?auto?05/10 t2526 6. typical electrical curves at t amb = 25c figure 6-1. i eemin versus i in_dc , v s = 3v figure 6-2. i eemin versus i in_dc , v s = 5v figure 6-3. v in versus i in_dc , v s = 3v 0.1 1 10 100 i eemin (na) 0.1 1 1000 100 10 i in_dc (a) v s = 3v f = f 0 0.1 1 10 100 i eemin (na) 0.1 1 1000 100 10 i in_dc (a) v s = 5v f = f 0 2.5 0 0.5 1.0 1.5 2.0 3.0 3.5 v in (v) 0 0.1 1000 100 110 i in_dc (a) v s = 3v f = f 0
8 4597i?auto?05/10 t2526 figure 6-4. v in versus i in_dc , v s = 5v figure 6-5. data transmission rate, v s = 3v figure 6-6. data transmission rate, v s = 5v 2.5 0 0.5 1.0 1.5 2.0 3.0 3.5 v in (v) 0 0.1 1000 100 110 i in_dc (a) v s = 5v f = f 0 0 50 0 1000 1500 2000 2500 3 000 3 50 0 4000 4500 5000 25 3 54555 65 f 0 (khz) bit s / s l a mp type s hort bu r s t v s = 3 v s t a nd a rd type 0 50 0 1000 1500 2000 2500 3 000 3 50 0 4000 4500 5000 25 3 54555 65 f 0 (khz) bit s / s v s = 5v s hort bu r s t s t a nd a rd type l a mp type
9 4597i?auto?05/10 t2526 figure 6-7. typical bandpass curve q = f/f 0 /b; b => ?3 db values. example: q = 1/(1.047 ? 0.954) = 11 figure 6-8. illustration of used terms example: f = 30 khz, burst with 16 pulses, 16 periods 1.1 0.8 0.9 0.4 0.5 0.98 1.00 1.04 1.06 1.08 1.02 0.96 0.94 0.92 f/f 0 0.6 0.7 1.0 relative amplitude v s = 3v bandwidth (-3 db) 116 envelope 16 t envelope 1 17056 s/data word telegram pause data word data word in out out 533 s 17 ms 33 s 533 s t doff t ref = 62 ms t don burst (n = 16 pulses) 7 7 7 1066 s period (p = 16)
10 4597i?auto?05/10 t2526 figure 6-9. test circuit figure 6-10. application circuit 1 nf 16 u2 dc u1 i in_dc i in v pulse i in_ac100 i ee f 0 i in_dc = u2/40 k r 1 = 220 i ee = u1/400 k t per = 10 ms v dd = 3v to 5v c 1 4.7 f 20 k - + 20 k 1 nf gnd out + t2526 in vs 400 k = c 2 (1) = 470 pf r 2 (1) > 2.4 k (1) optional 4.7 f c 1 + gnd out microcontroller t2526 rpu in vs v dd = 3v to 5v
11 4597i?auto?05/10 t2526 7. chip dimensions figure 7-1. chip size in m note: pad coordinates are given for lower left co rner of the pad in m from the origin 0,0 note: 1. value depends on manufacture location. dimensions length inclusive scribe 1.16 mm width inclusive scribe 1.37 mm thickness 290 5% pads 90 90 fusing pads 70 70 pad metallurgy material alcu/alsiti (1) thickness 0.8 m finish material si 3 n 4 /sio 2 thickness 0.7/0.3 m 0,0 1210, 1040 scribe width length t2526 336,906 55,62 55,652 783,887 fusing in gnd out vs
12 4597i?auto?05/10 t2526 notes: 1. xx means the used carrier frequency value f 0 30, 33, 36, 38, 40, 44 or 56 khz 2. two pad layout versions (see figure 8-1 and figure 8-2 ) available for different assembly demand 3. integrated pull-up resistor at pin out (see electrical characteristics) 4. typical data transmission rate up to bit/s with f 0 = 56 khz, v s = 5v (see figure 6-8 on page 9 ) 5. on request: noise type, data rate type 8.1 pad layout figure 8-1. pad layout 1 figure 8-2. pad layout 2 8. ordering information delivery: unsawn wafers (ddw) in box extended type number pl (2) r pu (3) d (4) type (5) t2526s0xx (1) c-ddw 2 30 2179 standard type: 10 pulses, enhanced sensibility, high data rate t2526s1xx (1) c-ddw 1 30 2179 t2526s2xx (1) c-ddw 2 40 1404 lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission t2526s3xx (1) c-ddw 1 40 1404 t2526s6xx (1) c-ddw 2 30 3415 short burst type: 6 pulses, enhanced data rate t2526s7xx (1) c-ddw 1 30 3415 t2526 out in gnd fusing vs t2526 vs in gnd (5) (6) (3) (1) fusing out
13 4597i?auto?05/10 t2526 9. revision history please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. revision no. history 4597i-auto-05/10 ? features on page 1 changed ? section 1 ?description? on page 1 changed ? section 2 ?pin description? on page 3 changed ? section 4 ?thermal resistance? on page 3 deleted ? section 4 ?electrical characteristic s, 3-v operation? on pages 4 to 5 changed ? section 5?electrical characteristic s, 5-v operation? on pages 5 to 6 changed ? figure 6-5 ?data transmission rate, v s = 3v? on page 8 changed ? figure 6-6 ?data transmission rate, v s = 5v? on page 8 changed 4597h-auto-09/09 ? put datasheet in newest template ? ordering information table changed 4597g-auto-10/06 ? features on page 1 changed ? applications on page 1 changed ? section 1 ?description? on page 1 changed ? section 5 ?electrical characteristic s, 3-v operation? number 3.4 on page 3 changed ? section 6 ?electrical characteristics, 5-v operation? number 7.3 and 7.4 on page 5 changed ? section 9 ?ordering information? on page 11 changed 4597f-auto-04/06 ? section 9 ?ordering information? on page 11 changed 4597e-auto-04/06 ? put datasheet in a new template ? section 8 ?chip dimensions? on page 10 changed 4597d-auto-08/05 ? put datasheet in a new template ? first page: pb-free logo added ? page 11: ordering information changed ? page 2, 3, 5, 11, 13: so8 deleted
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